SMBTA06U 1 nov-30-2001 npn silicon af transistor array high breakdown voltage low collector-emitter saturation voltage complementary type: smbta56u (pnp) two ( galvanic) internal isolated transistors with good matching in one package vpw09197 1 2 3 4 5 6 eha07178 6 54 3 2 1 c1 b2 e2 c2 b1 e1 tr1 tr2 type marking pin configuration package SMBTA06U s1g 1=e1 2=b1 3=c2 4=e2 5=b2 6=c1 sc74 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 80 v collector-base voltage v cbo 80 emitter-base voltage v ebo 4 dc collector current i c 500 ma peak collector current i cm 1 a base current i b 100 ma peak base current i bm 200 total power dissipation , t s = 115 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction - soldering point 1) r thjs 105 k/w 1 for calculation of r thja please refer to application note thermal resistance
SMBTA06U 2 nov-30-2001 electrical characteristics parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 80 - - v collector-base breakdown voltage i c = 100 a, i e = 0 v (br)cbo 80 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 4 - - collector cutoff current v cb = 80 v, i e = 0 i cbo - - 100 na collector cutoff current v cb = 80 v, i e = 0 , t a = 150 c i cbo - - 20 a collector cutoff current v ce = 60 v, i b = 0 i ceo - - 100 na dc current gain 1) i c = 10 ma, v ce = 1 v i c = 100 ma, v ce = 1 v h fe 100 100 - - - - - collector-emitter saturation voltage1) i c = 100 ma, i b = 10 ma v cesat - - 0.25 v base-emitter voltage 1) i c = 100 ma, v ce = 1 v v be(on) - - 1.2 ac characteristics transition frequency i c = 20 ma, v ce = 5 v, f = 20 mhz f t - 100 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 12 - pf 1) pulse test: t 300 s, d = 2%
SMBTA06U 3 nov-30-2001 collector cutoff current i cbo = f ( t a ) v cb = 80v ehp00820 10 0 c a 150 na cbo 10 4 1 10 -1 5 50 100 5 10 2 10 0 5 t max typ 5 10 3 total power dissipation p tot = f ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 250 300 mw 400 p tot permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
SMBTA06U 4 nov-30-2001 base-emitter saturation voltage i c = f (v besat ), h fe = 10 ehp00818 10 0 v besat 1.5 c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v ma 5 10 2 100 ?c 25 ?c -50 ?c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0.0 10 ehp00819 cesat v 0 3 10 c ma 1 10 2 10 c 5 5 100 25 c -50 c 0.1 0.2 0.3 0.4 0.5 0.6 v 0.8 dc current gain h fe = f ( i c ) v ce = 1v ehp00821 10 h c fe 10 1 10 -1 0 100 c 25 c -50 c 1 10 2 10 3 10 ma 2 10 3 10 0 10 collector current i c = f ( v be ) v ce = 1v ehp00815 10 0 v be 1.5 c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v ma 5 10 2 100 c 25 c -50 c
SMBTA06U 5 nov-30-2001 transition frequency f t = f ( i c ) v ce = 5v 10 ehp00817 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz 55
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